Datasheet4U Logo Datasheet4U.com

VBT1045C Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

VBT1045C Description

New Product VBT1045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.34 V at IF = 2.5 A TMBS ® .

VBT1045C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 K
* Not recommended for PCB bottom side wave mounting
* Compliant to RoHS Direct

VBT1045C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2 x 5.0 A 45 V 100 A 0.41 V 150 °C MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94

📥 Download Datasheet

Preview of VBT1045C PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VBT1045C
Manufacturer
Vishay ↗
File Size
131.63 KB
Datasheet
VBT1045C_Vishay.pdf
Description
Dual Low-Voltage Trench MOS Barrier Schottky Rectifier

📁 Related Datasheet

  • VBT2045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBT3045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBT4045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBT6045C - Dual Low-Voltage Trench MOS Barrier Schottky Rectifier (Vishay Siliconix)
  • VBTA1220N - N-Channel MOSFET (VBsemi)
  • VBTA1220NS - N-Channel MOSFET (VBsemi)
  • VBTA7322 - N-Channel MOSFET (VBsemi)

📌 All Tags

Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VBT1045C-like datasheet