Datasheet4U Logo Datasheet4U.com

VB10170CHM3, VB10170C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB10170CHM3 Description

VB10170C-E3, VB10170C-M3, VB10170CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low.

VB10170CHM3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material c

VB10170CHM3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: VB10170CHM3, VB10170C-M3. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VB10170CHM3, VB10170C-M3
Manufacturer
Vishay ↗
File Size
88.29 KB
Datasheet
VB10170C-M3-Vishay.pdf
Description
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Note
This datasheet PDF includes multiple part numbers: VB10170CHM3, VB10170C-M3.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

📌 All Tags

Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay
Vishay VB10170CHM3-like datasheet