Description
VB10170C-E3, VB10170C-M3, VB10170CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low.
Features
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
* Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
* Material c
Applications
* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/
