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VB10170C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

VB10170C Description

www.vishay.com VB10170C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A TM.

VB10170C Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912

VB10170C Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. 2x5A 170 V 80 A 0.65 V 175 °C MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0

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Datasheet Details

Part number
VB10170C
Manufacturer
Vishay ↗
File Size
85.96 KB
Datasheet
VB10170C-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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