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VB10150S High Voltage Trench MOS Barrier Schottky Rectifier

VB10150S Description

www.vishay.com V10150S, VF10150S, VB10150S, VI10150S Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = .

VB10150S Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for

VB10150S Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. A NC VB10150S NC K A HEATSINK 3 2 1 VI10150S PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package 10 A

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Datasheet Details

Part number
VB10150S
Manufacturer
Vishay ↗
File Size
150.56 KB
Datasheet
VB10150S-Vishay.pdf
Description
High Voltage Trench MOS Barrier Schottky Rectifier

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High Voltage Trench MOS Barrier Schottky Rectifier Vishay
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