VB10170C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com VB10170C-E3 Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A .

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Datasheet Specifications

Part number: VB10170C-E3
Manufacturer: Vishay ↗
File Size: 86.50 KB
Datasheet: VB10170C-E3-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 2x5A 170 V 80 A 0.65 V 175 °C TO-263AB Diode variations Common cathode MECHANICAL D

VB10170C-E3 Distributors

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VB10170C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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