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VB10170C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB10170C-M3 Description

VB10170C-E3, VB10170C-M3, VB10170CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low.

VB10170C-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C
* Material c

VB10170C-M3 Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. MECHANICAL DATA Case: TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/

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Datasheet Details

Part number
VB10170C-M3
Manufacturer
Vishay ↗
File Size
88.29 KB
Datasheet
VB10170C-M3-Vishay.pdf
Description
Dual High Voltage Trench MOS Barrier Schottky Rectifier

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Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay
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