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VB10170CHM3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier

This page provides the datasheet information for the VB10170CHM3, a member of the VB10170C-M3 Dual High Voltage Trench MOS Barrier Schottky Rectifier family.

Features

  • Trench MOS Schottky technology.
  • Low forward voltage drop, low power losses.
  • High efficiency operation.
  • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3.
  • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number VB10170CHM3
Manufacturer Vishay
File Size 88.29 KB
Description Dual High Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet VB10170CHM3 Datasheet
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Full PDF Text Transcription

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VB10170C-E3, VB10170C-M3, VB10170CHM3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.57 V at IF = 2.5 A TMBS ® TO-263AB K 2 1 VB10170C PIN 1 K PIN 2 HEATSINK PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 5.0 A TJ max. Package 2x5A 170 V 80 A 0.65 V 175 °C TO-263AB Diode variations Common cathode FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.vishay.
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