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VB1210 - N-Channel MOSFET

Datasheet Summary

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Gen III Power MOSFET.
  • 100 % Rg Tested.
  • 100 % UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET.

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Datasheet Details

Part number VB1210
Manufacturer VBsemi
File Size 329.65 KB
Description N-Channel MOSFET
Datasheet download datasheet VB1210 Datasheet
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VB1210 N-Channel 20V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.011 at VGS = 10 V 20 0.012 at VGS = 4.5 V ID (A)a, g 9 8 Qg (Typ.) 8nC (SOT-23) G1 S2 3D FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 12 TC = 25 °C 9a, g Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C 6.5g 7 b, c A 4.5b, c Pulsed Drain Current IDM 32g Avalanche Current Avalanche Energy L = 0.1 mH IAS 15 EAS 11.
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