Click to expand full text
VB1204M
N-Channel 200 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) 200
RDS(on) () 1.4 at VGS = 10 V
ID (A) 0.6
TO-236 (SOT-23)
G1 S2
3D
Top View
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • 100 % Rg and UIS Tested • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
200
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currentb
TA = 25 °C TA = 70 °C
ID
0.6
0.45
0.5
0.35
A
IDM
2.5
Avalanche Currentb Single Avalanche Energy
L = 0.1 mH
IAS
2.5
EAS
50
mJ
Continuous Source Current (Diode Conduction)a
IS
0.
VB1204M Datasheet
