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VB1106K
N-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
100
2.8 at VGS = 10 V
ID (mA) 260
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Low Threshold: 2 V (typ.) • Low Input Capacitance: 25 pF • Fast Switching Speed: 25 ns • Low Input and Output Leakage • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
SOT-23 G1
3D S2
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)b Pulsed Drain Currenta
Power Dissipationb Maximum Junction-to-Ambientb Operating Junction and Storage Temperature Range
TA = 25 °C TA = 100 °C
TA = 25 °C TA = 100 °C
VDS VGS
ID
IDM PD RthJA TJ, Tstg
Notes: a.
VB1106K Datasheet
