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VB1102M
N-Channel 100 V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V)
RDS(on) ()
ID (A)a
0.240 at VGS = 10 V
2.0
100
0.250 at VGS = 6 V
1.8
0.260 at VGS = 4.5 V
1.7
Qg (Typ.) 2.9 nC
G1 S2
3D
FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested • Material categorization:
APPLICATIONS • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs
www.VBsemi.com
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current
IDM
TC = 25 °C TA = 25 °C
IS
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.
VB1102M Datasheet
