V8PL6-M3 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V8PL6-M3 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF =.

📥 Download Datasheet

V8PL6-M3 Datasheet Preview — Preview of V8PL6-M3 PDF

Datasheet Specifications

Part number: V8PL6-M3
Manufacturer: Vishay ↗
File Size: 94.87 KB
Datasheet: V8PL6-M3-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 8.0 A (TA = 125 °C) TJ max. Package 8.0 A 60 V 140 A 0.42 V 150 °C SMPC (TO-277A) Circuit configuration Single MECHANICAL D

V8PL6-M3 Distributors

📁 Related Datasheet

📌 All Tags

V8PL6-M3 Trench MOS Barrier Schottky Rectifier Vishay

Vishay V8PL6-M3-like datasheet