V8P10 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V8P10 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0..

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Datasheet Specifications

Part number: V8P10
Manufacturer: Vishay ↗
File Size: 99.42 KB
Datasheet: V8P10-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM IFSM 100 V 150 A EAS 100 mJ VF at IF = 8 A 0.582 V TJ max. Package 150 °C SMPC (TO-277A) Diode variations Single MECHANICAL DA

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V8P10 Trench MOS Barrier Schottky Rectifier Vishay

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