V8P12 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V8P12 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.53 V at .

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Datasheet Specifications

Part number: V8P12
Manufacturer: Vishay ↗
File Size: 101.97 KB
Datasheet: V8P12-Vishay.pdf
Description: High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHM3 - halogen-fr

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V8P12 High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Vishay

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