V8P45 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V8P45 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0..

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Datasheet Specifications

Part number: V8P45
Manufacturer: Vishay ↗
File Size: 99.21 KB
Datasheet: V8P45-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 45 V IFSM VF at IF = 8.0 A (TA = 125 °C) 140 A 0.41 V TJ max. 150 °C Package SMPC (TO-277A) Circuit configuration Single MECH

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V8P45 Trench MOS Barrier Schottky Rectifier Vishay

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