V8P6 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V8P6 Vishay General Semiconductor High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.3.

📥 Download Datasheet

V8P6 Datasheet Preview — Preview of V8P6 PDF

Datasheet Specifications

Part number: V8P6
Manufacturer: Vishay ↗
File Size: 89.33 KB
Datasheet: V8P6-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm Available
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters, and polarity protection applications. PRIMARY CHARACTERISTICS IF(AV) 8.0 A VRRM 60 V IFSM 140 A VF at IF = 8.0 A (TA = 125 °C) 0.46 V TJ max. Package 150 °C SMPC (TO-277A) Circuit configuration Single MECH

V8P6 Distributors

📁 Related Datasheet

📌 All Tags

V8P6 Trench MOS Barrier Schottky Rectifier Vishay

Vishay V8P6-like datasheet