V8P20 Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V8P20 Vishay General Semiconductor High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.60 V at .

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Datasheet Specifications

Part number: V8P20
Manufacturer: Vishay ↗
File Size: 98.87 KB
Datasheet: V8P20-Vishay.pdf
Description: Trench MOS Barrier Schottky Rectifier

Features

* Very low profile - typical height of 1.1 mm
* Ideal for automated placement
* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

Applications

* For use in low voltage high frequency inverters, freewheeling, DC/DC converters and polarity protection applications. MECHANICAL DATA Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Terminals: matte tin plat

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V8P20 Trench MOS Barrier Schottky Rectifier Vishay

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