V30120CI Dual High Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.vishay.com V30120CI Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.49 V at IF = 5 A TMBS.

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Datasheet Specifications

Part number: V30120CI
Manufacturer: Vishay ↗
File Size: 130.26 KB
Datasheet: V30120CI-Vishay.pdf
Description: Dual High Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106
* Material categorization: for definitions of compliance please see www. vishay. com/doc?99

Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 120 V 160 A VF at IF = 15 A (125 °C) 0.66 V TJ max. 150 °C Package TO-220AB Diode variati

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V30120CI Dual High Voltage Trench MOS Barrier Schottky Rectifier Vishay

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