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V30100PW-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier

V30100PW-M3 Description

www.vishay.com V30100PW-M3 Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.58 V at IF = 8 A T.

V30100PW-M3 Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* Material categorization: For definitions of compliance please see www. vishay. com/doc?99912 TO-3PW PIN

V30100PW-M3 Applications

* For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM 100 V IFSM EAS at L = 60 mH 120 A 150 mJ VF at IF = 15 A 0.68 V TJ max. 150 °C Package TO-3PW

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Datasheet Details

Part number
V30100PW-M3
Manufacturer
Vishay ↗
File Size
82.22 KB
Datasheet
V30100PW-M3-Vishay.pdf
Description
Dual High-Voltage Trench MOS Barrier Schottky Rectifier

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Dual High-Voltage Trench MOS Barrier Schottky Rectifier Vishay
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