V30100SG High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Description

www.DataSheet.co.kr New Product V30100SG, VF30100SG, VB30100SG & VI30100SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Re.

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Datasheet Specifications

Part number: V30100SG
Manufacturer: Vishay ↗
File Size: 226.78 KB
Datasheet: V30100SG_Vishay.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance 2 V30100SG PIN 1 PIN 2 CASE 3 1 VF30100SG PIN 1 PIN 2 2 3 1
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (

Applications

* PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB30100SG NC A K HEATSINK 2 3 For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Epoxy

V30100SG Distributors

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V30100SG High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

Vishay V30100SG-like datasheet