V30120S High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay Siliconix

Description

www.vishay.com V30120S, VI30120S Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.43 V at IF = 5 A .

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Datasheet Specifications

Part number: V30120S
Manufacturer: Vishay ↗ Siliconix
File Size: 134.44 KB
Datasheet: V30120S_VishaySiliconix.pdf
Description: High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Solder dip 275 °C max. 10 s, per JESD 22-B106
* AEC-Q101 qualified
* Material categorization: For definitions of compliance please see www. visha

Applications

* For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection. PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 30 A TJ max. Package 30 A 120 V 300 A 0.74 V 150 °C TO-220AB, TO-262AA Diode variation Single MECHANICAL

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V30120S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay Siliconix

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