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VBP17R47S MOSFET

VBP17R47S Description

VBP17R47S www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) typ.() at 25 °C Qg max.(nC) Qgs (nC) Qgd (nC) Configuration 750 VGS = 10 V .

VBP17R47S Features

* Fast body diode MOSFET using E series technology
* Reduced trr, Qrr, and IRRM
* Low figure-of-merit (FOM): Ron x Qg
* Low input capacitance (Ciss)
* Low switching losses due to reduced Qrr
* Ultra low gate charge (Qg)
* Avalanche energy rated

VBP17R47S Applications

* Telecommunications - Server and telecom power supplies
* Lighting - High intensity discharge (HID) - Light emitting diodes (LEDs)
* Consumer and computing - ATX power supplies
* Industrial - Welding - Battery chargers
* Renewable energy - Solar (PV inverters

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Datasheet Details

Part number
VBP17R47S
Manufacturer
VBsemi
File Size
259.30 KB
Datasheet
VBP17R47S-VBsemi.pdf
Description
MOSFET

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