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VBP1106 N-Channel MOSFET

VBP1106 Description

VBP1106 N-Channel 100 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.006 at VGS = 10 V ID (A) 150 .

VBP1106 Features

* TrenchFET® Power MOSFET
* New Package with Low Thermal Resistance
* 100 % Rg Tested D TO-247AC S D G Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain

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Datasheet Details

Part number
VBP1106
Manufacturer
VBsemi
File Size
260.80 KB
Datasheet
VBP1106-VBsemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET VBsemi
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