Datasheet4U Logo Datasheet4U.com

VBP1104N N-Channel MOSFET

VBP1104N Description

VBP1104N N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.035 at VGS = 10 V ID (A) 85 TO-247AC S D .

VBP1104N Features

* TrenchFET® Power MOSFET
* 175 °C Junction Temperature
* Low Thermal Resistance Package

VBP1104N Applications

* Isolated DC/DC Converters D G S N-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current I

📥 Download Datasheet

Preview of VBP1104N PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VBP1104N
Manufacturer
VBsemi
File Size
243.66 KB
Datasheet
VBP1104N-VBsemi.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • VBP104FAS - Silicon PIN Photodiode (Vishay)
  • VBP104FASR - Silicon PIN Photodiode (Vishay)
  • VBP104S - Silicon PIN Photodiode (Vishay)
  • VBP104SR - Silicon PIN Photodiode (Vishay)
  • VBPW34FAS - Silicon PIN Photodiode (Vishay)
  • VBPW34FASR - Silicon PIN Photodiode (Vishay)
  • VBPW34S - Silicon PIN Photodiode (Vishay)
  • VBPW34SR - Silicon PIN Photodiode (Vishay)

📌 All Tags

N-Channel MOSFET VBsemi
VBsemi VBP1104N-like datasheet