VBP112MC100-4L N-Channel MOSFET

VBsemi

Description

VBP112MC100-4L N-Channel 1200V (D-S) SiC Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) at 25 °C (Ω) Qg (nC) 1200 VGS = 18.

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Datasheet Specifications

Part number: VBP112MC100-4L
Manufacturer: VBsemi
File Size: 859.79 KB
Datasheet: VBP112MC100-4L-VBsemi.pdf
Description: N-Channel MOSFET

Features

* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)

Applications

* Server and telecom power supplies
* Switch mode power supplies (SMPS)
* Power factor correction power supplies (PFC)
* DC/DC converter D G TO-247-4L
* Pin1 D - Drain
* Pin2 S - Source(Power)
* Pin3 S - Source(Driver)
* Pin4 G - Gate S

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VBP112MC100-4L N-Channel MOSFET VBsemi

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