Datasheet4U Logo Datasheet4U.com

VBP112MI75 1200V Trench and Fieldstop IGBT

VBP112MI75 Description

VBP112MI75 1200V Trench and Fieldstop IGBT www.VBsemi.com PRODUCT SUMMARY VCE (V) IC (A) 1200 150 (TC=25 ) 75 (TC=100 ) VCE sat (V) 1.8 ICM (A).

VBP112MI75 Features

* Very Low VCEsat
* Low turn-off losses
* High speed switching
* Maximum junction temperature 175°C
* Ultra low gate charge (Qg)

VBP112MI75 Applications

* Telecommunications - Server and telecom power supplies
* Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
* Consumer and computing - ATX power supplies
* Industrial - Welding - Battery chargers
* Renewable energy - Solar (PV inverters

📥 Download Datasheet

Preview of VBP112MI75 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
VBP112MI75
Manufacturer
VBsemi
File Size
3.22 MB
Datasheet
VBP112MI75-VBsemi.pdf
Description
1200V Trench and Fieldstop IGBT

📁 Related Datasheet

  • VBP104FAS - Silicon PIN Photodiode (Vishay)
  • VBP104FASR - Silicon PIN Photodiode (Vishay)
  • VBP104S - Silicon PIN Photodiode (Vishay)
  • VBP104SR - Silicon PIN Photodiode (Vishay)
  • VBPW34FAS - Silicon PIN Photodiode (Vishay)
  • VBPW34FASR - Silicon PIN Photodiode (Vishay)
  • VBPW34S - Silicon PIN Photodiode (Vishay)
  • VBPW34SR - Silicon PIN Photodiode (Vishay)

📌 All Tags

1200V Trench and Fieldstop IGBT VBsemi
VBsemi VBP112MI75-like datasheet