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VBP112MI75 1200V Trench and Fieldstop IGBT

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Description

VBP112MI75 1200V Trench and Fieldstop IGBT www.VBsemi.com PRODUCT SUMMARY VCE (V) IC (A) 1200 150 (TC=25 ) 75 (TC=100 ) VCE sat (V) 1.8 ICM (A).

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Datasheet Specifications

Part number
VBP112MI75
Manufacturer
VBsemi
File Size
3.22 MB
Datasheet
VBP112MI75-VBsemi.pdf
Description
1200V Trench and Fieldstop IGBT

Features

* Very Low VCEsat
* Low turn-off losses
* High speed switching
* Maximum junction temperature 175°C
* Ultra low gate charge (Qg)

Applications

* Telecommunications - Server and telecom power supplies
* Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting
* Consumer and computing - ATX power supplies
* Industrial - Welding - Battery chargers
* Renewable energy - Solar (PV inverters

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