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VBP112MC100 N-Channel MOSFET

VBP112MC100 Description

VBP112MC100 N-Channel 1200V (D-S) SiC Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max.RDS(on) at 25 °C (Ω) Qg (nC) 1200 VGS = 18 V .

VBP112MC100 Features

* Low figure-of-merit (FOM) Ron x Qg
* Low input capacitance (Ciss)
* Reduced switching and conduction losses
* Ultra low gate charge (Qg)

VBP112MC100 Applications

* Server and telecom power supplies
* Switch mode power supplies (SMPS)
* Power factor correction power supplies (PFC)
* DC/DC converter TO-247 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Vol

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Datasheet Details

Part number
VBP112MC100
Manufacturer
VBsemi
File Size
835.24 KB
Datasheet
VBP112MC100-VBsemi.pdf
Description
N-Channel MOSFET

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