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TIM5964-4SL-422 MICROWAVE POWER GaAs FET

TIM5964-4SL-422 Description

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TIM5964-4SL-422 Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.85GHz to 6.75GHz ･HIGH GAIN G1dB= 8.0dB(Min. ) at 5.85GHz to 6.75GHz ･HERMETICALLY SEALED PACKAGE ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 25.5dBm Single Carrier Level. MICROWAVE POWER GaAs FET TIM5964-4SL-422 RF PERFORMA

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM5964-4SL-422-like datasheet