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TIM5964-30UL MICROWAVE POWER GaAs FET

TIM5964-30UL Description

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TIM5964-30UL Features

* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.0dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-30UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point Pow

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MICROWAVE POWER GaAs FET Toshiba
Toshiba TIM5964-30UL-like datasheet