Datasheet Specifications
- Part number
- TIM5964-35SLA
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 366.33 KB
- Datasheet
- TIM5964-35SLA_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 45.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz ･LOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-35SLA RF PERFORMANCE SPECIFICATIM5964-35SLA Distributors
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