Datasheet Specifications
- Part number
- TIM5964-12UL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 296.54 KB
- Datasheet
- TIM5964-12UL_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
MICROWAVE POWER GaAs FET TIM5964-12UL .
Features
* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 41.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION IM3= -47dBc at Pout= 30.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS OTIM5964-12UL Distributors
📁 Related Datasheet
📌 All Tags