Datasheet Specifications
- Part number
- TIM5964-30SL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 193.17 KB
- Datasheet
- TIM5964-30SL_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
MICROWAVE POWER GaAs FET www.DataSheet4U.com MICROWAVE SEMICONDUCTOR TIM5964-30SL TECHNICAL DATA .
Features
* n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 34.5 dBm, Single Carrier Level n HIGH POWER P1dB=45.0 dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=8.0dB at 5.9GHz to 6.4GHz n BROAD BAND INTERNALLY MATCHED FET n HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS OApplications
* of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein isTIM5964-30SL Distributors
📁 Related Datasheet
📌 All Tags