Datasheet Specifications
- Part number
- TIM5964-45SL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 300.03 KB
- Datasheet
- TIM5964-45SL_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
MICROWAVE POWER GaAs FET TIM5964-45SL .
Features
* ŋBROAD BAND INTERNALLY MATCHED FET ŋHIGH POWER P1dB= 46.5dBm at 5.9GHz to 6.4GHz ŋHIGH GAIN G1dB= 9.0dB at 5.9GHz to 6.4GHz ŋLOW INTERMODULATION DISTORTION IM3= -45dBc at Pout= 35.5dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS OuTIM5964-45SL Distributors
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