Datasheet Specifications
- Part number
- TIM5964-4UL
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 234.02 KB
- Datasheet
- TIM5964-4UL_ToshibaSemiconductor.pdf
- Description
- MICROWAVE POWER GaAs FET
Description
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Features
* ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 5.9GHz to 6.4GHz ･HIGH GAIN G1dB= 10.0dB at 5.9GHz to 6.4GHz ･HERMETICALLY SEALED PACKAGE MICROWAVE POWER GaAs FET TIM5964-4UL RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Gain Compression Point PoweTIM5964-4UL Distributors
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