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TH58NYG4S0FBAID - 16 GBIT (2G x 8 BIT) CMOS NAND E2PROM

TH58NYG4S0FBAID Description

TH58NYG4S0FBAID TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM .
The TH58NYG4S0F is a single 1.

TH58NYG4S0FBAID Features

* Organization x8 Memory cell array 4328 × 256K × 8 × 2 Register 4328 × 8 Page size 4328 bytes Block size (256K + 14.5K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Pag

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GBIT BIT CMOS NAND E2PROM Toshiba
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