TH58NYG3S0HBAI6 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM

Toshiba

Description

TH58NYG3S0HBAI6 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM .
The TH58NYG3S0HBAI6 is a single 1.

📥 Download Datasheet

TH58NYG3S0HBAI6 Datasheet Preview — Preview of TH58NYG3S0HBAI6 PDF

Datasheet Specifications

Part number: TH58NYG3S0HBAI6
Manufacturer: Toshiba ↗
File Size: 1.17 MB
Datasheet: TH58NYG3S0HBAI6-Toshiba.pdf
Description: 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM

Features

* Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 × 2 4352 × 8 4352 bytes (256K + 16K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

TH58NYG3S0HBAI6 Distributors

📁 Related Datasheet

TH58NVG1S3AFT05 TH58NVG4S0FTA20 TH58NVG5S0FTA20 TH58NVG5S0FTAK0 TH58100FT TH58100FTI

📌 All Tags

TH58NYG3S0HBAI6 8-GBIT 8-BIT CMOS NAND E2PROM Toshiba

Toshiba TH58NYG3S0HBAI6-like datasheet