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TH58NYG3S0HBAI6 - 8-GBIT (1G x 8-BIT) CMOS NAND E2PROM

TH58NYG3S0HBAI6 Description

TH58NYG3S0HBAI6 MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM .
The TH58NYG3S0HBAI6 is a single 1.

TH58NYG3S0HBAI6 Features

* Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 × 2 4352 × 8 4352 bytes (256K + 16K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

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8-GBIT 8-BIT CMOS NAND E2PROM Toshiba
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