Datasheet Specifications
- Part number
- TH58100FTI
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 495.96 KB
- Datasheet
- TH58100FTI_ToshibaSemiconductor.pdf
- Description
- TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Description
TH58100FTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT (128M × 8 BITS) CMOS NAND E PROM .
Features
* Organization Memory cell allay 528 × 128K × 8 × 2 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Multi Block Program, Multi Block Erase Mode control Serial input/output Command controlTH58100FTI Distributors
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