TH58100FTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba Semiconductor

TH58100FTI Description

TH58100FTI TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1-GBIT (128M × 8 BITS) CMOS NAND E PROM .
The TH58100 is a single 3.

TH58100FTI Features

* Organization Memory cell allay 528 × 128K × 8 × 2 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program Auto Block Erase, Status Read Multi Block Program, Multi Block Erase Mode control Serial input/output Command control

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Datasheet Details

Part number: TH58100FTI
Manufacturer: Toshiba ↗ Semiconductor
File Size: 495.96 KB
Datasheet: TH58100FTI_ToshibaSemiconductor.pdf
Description: TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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