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TH58NVG2S3BTG00 4-Gbit CMOS NAND EPROM

TH58NVG2S3BTG00 Description

TH58NVG2S3BTG00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT (512M × 8 BIT) CMOS NAND E PROM .
Lead-Free The TH58NVG2S3B is a single 3.

TH58NVG2S3BTG00 Features

* Organization TH58NVG2S3B 2112 × 128K × 8 × 2 2112 × 8 2112 bytes (128K + 4K) bytes Memory cell array www. DataSheet4U. com Register Page size Block size
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output Command control N

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4-Gbit CMOS NAND EPROM Toshiba
Toshiba TH58NVG2S3BTG00-like datasheet