TH58NVG1S3AFT05 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba Semiconductor

TH58NVG1S3AFT05 Description

TH58NVG1S3AFT05 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2GBIT (256M u 8BITS) CMOS NAND E2PROM .
The TH58NVG1S3A is a single 3.

TH58NVG1S3AFT05 Features

* x Organization Memory cell allay 2112 u 64K u 8 u 2 Register 2112 u 8 Page size 2112bytes Block size (128K 4K) bytes x Modes ReadResetAuto Page Program Auto Block EraseStatus Read x Mode control Serial inputoutput Command control x Powersupply x Program/Erase Cycles x Access time Cell array

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Datasheet Details

Part number: TH58NVG1S3AFT05
Manufacturer: Toshiba ↗ Semiconductor
File Size: 368.77 KB
Datasheet: TH58NVG1S3AFT05_ToshibaSemiconductor.pdf
Description: TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

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TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Toshiba Semiconductor

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