TH58BVG3S0HBAI4 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

Toshiba

Description

TH58BVG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G × 8 BIT) CMOS NAND E2PROM .
The TH58BVG3S0HBAI4 is a single 3.

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Datasheet Specifications

Part number: TH58BVG3S0HBAI4
Manufacturer: Toshiba ↗
File Size: 386.28 KB
Datasheet: TH58BVG3S0HBAI4-Toshiba.pdf
Description: 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

Features

* Organization Memory cell array Register Page size Block size x8 4224 × 128K × 8 × 2 4224 × 8 4224 bytes (256K + 8K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Read, Multi Page Program, Multi Block Erase, ECC Status Read

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TH58BVG3S0HBAI4 GBIT BIT CMOS NAND E2PROM Toshiba

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