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TH58NYG3S0HBAI4 - 8 GBIT (1G x 8 BIT) CMOS NAND E2PROM

TH58NYG3S0HBAI4 Description

TH58NYG3S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 8 GBIT (1G  8 BIT) CMOS NAND E2PROM .
The TH58NYG3S0HBAI4 is a single 1.

TH58NYG3S0HBAI4 Features

* Organization Memory cell array Register Page size Block size x8 4352  128K  8  2 4352  8 4352 bytes (256K  16K) bytes
* Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
* Mode

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GBIT BIT CMOS NAND E2PROM Toshiba
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