TC58NS512DC Datasheet (Toshiba) - 512 MBit CMOS NAND EPROM

TC58NS512DC, 512 MBit CMOS NAND EPROM

2 TM ) The TC58NS512 is a single 3.3-V 512-Mbit (553,648,128) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 4096 blocks.

The device has a 528-byte static register which allows program and read data to be transferred between the

TC58NS512DC Features

* Organization Memory cell array 528 × 128K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and