TC58NVG0S3AFT00 - 1 GBit CMOS NAND EPROM

Product Overview

Toshiba

Datasheet Details

Part number	TC58NVG0S3AFT00
Manufacturer	Toshiba
File Size	441.26 KB
Description	1 GBit CMOS NAND EPROM
Datasheet	TC58NVG0S3AFT00 Datasheet
Additional preview pages of the TC58NVG0S3AFT00 datasheet.

Product details

Description

The TC58NVG0S3A is a single 3.3-V 1G-bit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048+64) bytes x 64 pages x 1024 blocks.

Features

x Organization Memory cell allay 2112 u 64K u 8 Register 2112 u 8 Page size 2112bytes Block size (128K 4K) bytes x Modes ReadResetAuto Page Program Auto Block EraseStatus Read x Mode control Serial inputoutput Command control x Powersupply VCC 2.7 V to 3.6 V x Program/Erase Cycles 1E5 Cycles(With ECC) x Access time Cell array to register 25 Psmax Serial Read Cycle 50 ns min x Operating current Read (50 ns cycle) 10 mA typ. Program (avg. ) 10 mA typ. Erase (avg. ) 10 mA typ. Standby 50 PA.

📁 Similar Datasheet

TC58NS256DC - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM (Toshiba Semiconductor)
TC581282AXB - 128-MBIT (16M X 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)
TC58128FT - 128M-Bit CMOS NAND EPROM (Toshiba Semiconductor)
TC58128FTI - 128M-Bit CMOS NAND EPROM (Toshiba Semiconductor)
TC5816BDC - 16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM (Toshiba Semiconductor)
TC5816BFT - 16 MBIT (2M x 8BITS) CMOS NAND FLASH E2PROM (Toshiba Semiconductor)
TC58256AFT - 256-MBIT (32M X 8 BITS) CMOS NAND E2PROM (Toshiba Semiconductor)
TC58256DC - CMOS NAND EPROM (Toshiba Semiconductor)

Other Datasheets by Toshiba

TC58NVG0S3AFT05 - 1 GBit CMOS NAND EPROM
TC58NVG0S3ETA00 - 1 GBIT (128M X 8 BIT) CMOS NAND E2PROM
TC58NVG0S3HBAI4 - 1G BIT (128M x 8-BIT) CMOS NAND E2PROM
TC58NVG0S3HBAI6 - 1G-BIT (128M x 8 BIT) CMOS NAND E2PROM
TC58NVG0S3HTA00 - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM
TC58NVG0S3HTAI0 - 1 GBIT (128M x 8 BIT) CMOS NAND E2PROM

Published: Jul 6, 2005 |