TC58NS256BDC - 256 MBit CMOS NAND EPROM

Product Overview

Toshiba

Datasheet Details

Part number	TC58NS256BDC
Manufacturer	Toshiba
File Size	407.73 KB
Description	256 MBit CMOS NAND EPROM
Datasheet	TC58NS256BDC Datasheet
Additional preview pages of the TC58NS256BDC datasheet.

Product details

Description

) The TC58NS256B is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks.The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).The TC58NS256B is a serial-type memory de

Features

Organization Memory cell array 528 × 64K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and Data Format Specification issued by the SSFDC Forum.
Power supply VCC = 3.3 V ± 0.3 V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array-register 25.

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Published: Jul 6, 2005 |