TC58NS100DC - 1 GBit CMOS NAND EPROM

Product Overview

Toshiba

Datasheet Details

Part number	TC58NS100DC
Manufacturer	Toshiba
File Size	526.45 KB
Description	1 GBit CMOS NAND EPROM
Datasheet	TC58NS100DC Datasheet
Additional preview pages of the TC58NS100DC datasheet.

Product details

Description

) The TC58NS100 is a single 3.3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks.The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).The TC58NS100 is a serial-type memory devi

Features

Organization Memory cell array 528 × 256K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read Mode control Serial input/output, Command control Complies with the SmartMediaTM Electrical Specification and Data Format Specification issued by the SSFDC Forum.
Power supply VCC = 3.3 V ± 0.3 V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array-register 2.

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Published: Jul 6, 2005 |