| Part number | TC58NS256DC |
|---|---|
| Manufacturer | Toshiba Semiconductor |
| File Size | 709.64 KB |
| Description | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT CMOS NAND E2PROM |
| Datasheet |
 TC58NS256DC Datasheet
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2 TM ) The TC58NS256 is a single 3.3-V 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 2048 blocks.The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.The Erase operation is implemented in a single block unit (16 Kbytes + 512 bytes: 528 bytes × 32 pages).The TC58NS256 is a serial-type memo
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