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GT30J341 - Silicon N-Channel IGBT

Toshiba

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Datasheet Details

Part number	GT30J341
Manufacturer	Toshiba
File Size	295.62 KB
Description	Silicon N-Channel IGBT
Datasheet	GT30J341-Toshiba.pdf

GT30J341 Product details

Features

(1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ. ) (IC = 30 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and collector 3. Packaging and Internal Circuit GT30J341 TO-3P(N) 1: Gate 2: Collector (Heat sink) 3: Emitter Start of commercial production 2012-03 1 2014-01-07 Rev.2.0 GT30J341 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-em.

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Published: Jan 30, 2024 |