Datasheet Details
Part number:
GT30J301
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
316.32 KB
Description:
N-channel igbt.
GT30J301_ToshibaSemiconductor.pdf
GT30J301_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
GT30J301
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
316.32 KB
Description:
N-channel igbt.
GT30J301, N-Channel IGBT
GT30J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT30J301 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm l The 3rd Generation l Enhancement Mode l High Speed : tf = 0.30µs (Max.) l Low Saturation Voltage : VCE (sat) = 2.7V (Max.) l FRD included between Emitter and Collector MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector Emitter Voltage Gate Emitter Voltage DC Collector Current 1ms Emitter Collecto
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