Datasheet4U.com

GT30J110SRA - Silicon N-Channel IGBT

Toshiba

📥 Download Datasheet

GT30J110SRA Datasheet Preview — Preview of GT30J110SRA PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	GT30J110SRA
Manufacturer	Toshiba
File Size	539.97 KB
Description	Silicon N-Channel IGBT
Datasheet	GT30J110SRA-Toshiba.pdf

GT30J110SRA Product details

Features

(1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.17 µs (typ. ) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ. ) (IC = 30 A, Ta = 25.
) (6) High junction temperature: Tj = 175.
(max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector (Heatsink) 3: Emitter ©2020-2021 1 Toshiba Electronic Devices & Storage Corporation Start of co.

📁 GT30J110SRA Similar Datasheet

GT30J101 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J121 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J122 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J127 - 600V 200A IGBT MOSFET (ETC)
GT30J301 - N-Channel IGBT (Toshiba Semiconductor)
GT30J311 - N-Channel IGBT (Toshiba Semiconductor)
GT30J322 - Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J324 - Silicon N-Channel IGBT (Toshiba Semiconductor)

Other Datasheets by Toshiba

GT30J122A - Silicon N-Channel IGBT
GT30J126 - Silicon N-Channel IGBT
GT30J341 - Silicon N-Channel IGBT
GT30J65MRB - Silicon N-Channel IGBT
GT30N135SRA - Silicon N-Channel IGBT
GT35J321 - Silicon N-Channel IGBT

Published: Jan 30, 2024 |