GT35J321 Datasheet (Toshiba) - Silicon N-Channel IGBT

GT35J321, Silicon N-Channel IGBT

GT35J321 www.DataSheet4U.com TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT35J321 Fourth-generation IGBT Current Resonance Inverter Switching Applications z z z z z Enhancement mode High speed: tf = 0.19 μs (typ.) (IC = 50 A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50 A) FRD included between emitter and collector Toshiba package name: TO-3P(N)IS Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector emitter voltage Gate emit